ULTRA-SHALLOW P(-JUNCTION FORMATION IN SILICON BY EXCIMER-LASER DOPING - A HEAT AND MASS-TRANSFER PERSPECTIVE())

Citation
F. Aglat et al., ULTRA-SHALLOW P(-JUNCTION FORMATION IN SILICON BY EXCIMER-LASER DOPING - A HEAT AND MASS-TRANSFER PERSPECTIVE()), International journal of heat and mass transfer, 39(18), 1996, pp. 3855-3872
Citations number
19
Categorie Soggetti
Mechanics,"Engineering, Mechanical",Thermodynamics
ISSN journal
00179310
Volume
39
Issue
18
Year of publication
1996
Pages
3855 - 3872
Database
ISI
SICI code
0017-9310(1996)39:18<3855:UPFISB>2.0.ZU;2-8
Abstract
Using a cold hydraulic facility, we determine the convective mass tran sfer coefficients: local and global, from the surface of a flat plate segment impinging by axisymetrical circular jets coming through inline holes and pipe injectors from a plenum facing the plate. After the im pact, the fluid is extracted from the confined space located between t he plate and the plenum by means of exhausts whose influence we intend to examine: number and location. We show that transfers are increased by 5% when the extraction occurs by four exhausts and not by only one . As for the exhaust location (height), it clearly appears that the pa rameter is more significant since the local and global mass transfer i ncrease can reach 15% when we move away the exhausts from the injectio n plane of the plenum. The comparison of the two configurations, with holes and pipe injectors, points out that the second one has an advant age over the first one which can be materialized by a mass transfer in crease of 17%. A dynamic wall study, based on measurements of local fr iction and fluid direction gives a realistic view of flow structures a nd allows us to explain in a satisfying way the transfer evolution obt ained. Copyright (C) 1996 Elsevier Science Ltd.