SELF-ASSEMBLED CHROMOPHORIC NLO-ACTIVE MONOLAYERS - X-RAY REFLECTIVITY AND 2ND-HARMONIC GENERATION AS COMPLEMENTARY PROBES OF BUILDING BLOCK-FILM MICROSTRUCTURE RELATIONSHIPS
Sb. Roscoe et al., SELF-ASSEMBLED CHROMOPHORIC NLO-ACTIVE MONOLAYERS - X-RAY REFLECTIVITY AND 2ND-HARMONIC GENERATION AS COMPLEMENTARY PROBES OF BUILDING BLOCK-FILM MICROSTRUCTURE RELATIONSHIPS, Langmuir, 12(17), 1996, pp. 4218-4223
The microstructural changes in chromophoric self-assembled monolayers
induced by modifications in the architecture of the molecular componen
ts are studied by X-ray reflectivity and polarized second-harmonic gen
eration (SHG) spectroscopy. Monolayers prepared by chemisorption/quate
rnization of the chromophore precursor -[N,N-bis(3-hydroxypropyl)amino
]styryl-4'-pyridine (2a) on preassembled films of the coupling agents
(p-ClCH2C6H4)(CH2)(2)SiCl3 (1a), (p-ClCH2C6He4)(CH2)(2)SiCl2CH3 (1b):
and (p-ClCH2C6H4)(CH2)(2)SiCl( CH3)(2) (1c) display a progressive redu
ction in measured film thickness from 26.4 to 21.8 to 19.6 Angstrom an
d in optical second-harmonic response, chi((2)) (lambda = 1064 nm), fr
om 3.0 x 10(-7) to 1.7 x 10(-7) to 0.8 x 10(-7) esu, respectively, ind
icating reduced chromophore surface density with increasing methyl sub
stitution on the silicon of the coupling agent. The chromophoric group
s in the film also experience a slight increase in tilt angle with res
pect to the surface normal, from 37 degrees to 41 degrees to 43 degree
s, with increased methylation of Si, indicating that the reduction in
thickness is primarily due to microstructural changes in other regions
of the film. Monolayers prepared under slightly different conditions
with coupling agent 1a and chromophore precursor 2a or the analogous a
lkynyl chromophore precursor s(3-hydroxypropyl)amino]phenyl]ethynyl-4'
-pyridine (2b), and then capped with octachlorotrisiloxane, display a
decrease in measured film thickness from 20.5 to 15.1 Angstrom, an inc
rease in monolayer-air interface width, and a reduction in chi((2)) fr
om 2.0 x 10(-7) to 0.6 x 10(-7) esu when 2b is used in place of 2a. Pe
netration of the capping layer into the film microstructure is suggest
ed by a substantial increase in film electron density to similar to 70
% of silicon and an increased measured interface width.