RELAXATION-OSCILLATION PHENOMENA IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER

Relaxation-oscillation (RO) phenomena in a semiconductor diode laser w ith external optical injection are studied. We extend the concept of ' locked dynamics' to include excited ROs. A two-variable. scalar functi on W is constructed, from which the 'slow' (transient) dynamics of the RO can be derived as well as an earlier published 'potential' model. The function W is used to investigate bifurcations of the RO dynamics in the locking region. The location of the Hopf, and the period-doubli ng bifurcations are in good, respectively fair, agreement with numeric al simulations. A bistability is recovered and the dependence on the l inewidth enhancement parameter ('the alpha-parameter') is studied.