L. Galan et al., AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CARBON NITRIDE FILMS GROWN BY LOW-ENERGY ION-IMPLANTATION, Surface & coatings technology, 83(1-3), 1996, pp. 103-108
Nitrided carbon surface coatings with [N]/[C] ratios in the range 0.05
-0.34 were prepared by nitrogen ion implantation with energies ranging
between 250 and 5000 eV on graphite and hydrogenated amorphous carbon
. We present a core-level X-ray photoemission spectroscopy study of th
e composition and chemical bonding in these materials. The composition
s with higher N concentrations were obtained by consecutive implanting
from higher to lower energies. The N Is line shape shows the contribu
tion of at least four main chemical species: (i) nitrile at 398.70 eV;
(ii) at 399.70 eV, metastable, associated with high energy ion bombar
ding, could be strict nitride bonding; (iii) imine type at 400.7 eV of
N incorporated into the hexagonal rings of the graphitic structure; (
iv) surface-absorbed molecular nitrogen, at 402.4 eV. Their relative s
tabilities were also studied. On the contrary, the C Is line shape did
not show resolved peaks but a gradual broadening and a shift of its c
entroid, increasing linearly with increasing nitrogen concentration. T
he shifts observed were relatively large for these materials of very l
ow ionicity. The electron energy loss structures associated with the C
Is peak indicates an important reduction in valence pi electrons scre
ening with increasing nitrogen concentration, thus making a contributi
on to those shifts.