PARTIAL DISORDERING OF GAAS ALGAAS QUANTUM-WELL BY RAPID THERMAL ANNEALING/

The partial disordering of GaAs/AlGaAs quantum well (QW) material has been obtained by rapid thermal annealing with SiO2 dielectric capping film. In this case, the absorption edge of QW material was shifted app arently. A laser and a modulator were integrated on a same chip by par tial disordering process on the selected area of QW wafer which was gr own by molecular beam epitaxy.