ELECTRICAL-PROPERTIES OF SEMIINSULATING GAAS GROWN FROM THE MELT UNDER MICROGRAVITY CONDITIONS

Authors
WANG ZG LIN LY LI CJ ZHONG XR LI YY WAN SK SUN H
Citation
Zg. Wang et al., ELECTRICAL-PROPERTIES OF SEMIINSULATING GAAS GROWN FROM THE MELT UNDER MICROGRAVITY CONDITIONS, Chinese Physics Letters, 13(7), 1996, pp. 553-556
Citations number
5
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
7
Year of publication
1996
Pages
553 - 556
Database
ISI
SICI code
0256-307X(1996)13:7<553:EOSGGF>2.0.ZU;2-T
Abstract
A technologically important undoped semi-insulating (SI) GaAs single c rystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configurat ion described previously. The experimental results proved that the spa ce SI GaAs crystals have a lower density of defects and defect-impurit y complexes as well as a better uniformity.