INTERFACIAL REACTIONS BETWEEN TI THIN-FILMS AND INP

Authors
WANG D IVEY DG
Citation
D. Wang et Dg. Ivey, INTERFACIAL REACTIONS BETWEEN TI THIN-FILMS AND INP, Materials science & engineering. B, Solid-state materials for advanced technology, 41(2), 1996, pp. 289-293
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
41
Issue
2
Year of publication
1996
Pages
289 - 293
Database
ISI
SICI code
0921-5107(1996)41:2<289:IRBTTA>2.0.ZU;2-J
Abstract
Interfacial reactions that occur between Ti thin films and InP substra tes during annealing from 250 to 550 degrees C have been studied. Init ial interaction was detected at 325 degrees C, which resulted in the f ormation of metallic In and TiP. TiP formation was limited by kinetics at low temperatures and much of the P released during InP decompositi on was lost to the atmosphere. The amount of TiP increased with increa sing temperatures and TiP was the only Ti-P phase detected. No In-Ti c ompound formation was detected in any samples studied.