ATOMIC-STRUCTURE OF THE BETA-SIC(100)-(3X2) SURFACE

We investigate single domain beta-SiC(100)-(3 x 2) surfaces (Si rich) by atom resolved scanning tunneling microscopy (filled and empty elect ronic states). Flat and high-quality surfaces having a low density of defects are grown with first identification of individual Si atoms and dimers. Si-Si dimers form rows perpendicular to the dimer direction i n a (3 x 2) atomic arrangement with clear evidence of asymmetric dimer s all tilted in the same direction (i.e., not anticorrelated). Several types of defects are identified including primarily missing dimers an d dimer pairs. Addition Si is grown epitaxially with two-dimensional i sland formation having the (3 x 2) reconstruction.