CONDUCTION-VALENCE LANDAU-LEVEL MIXING EFFECT

The electronic Landau level structures of the symmetric Alsb-AlxGa1-xS b-InAs-AlxGa1-xSb-AlSb quantum wells are investigated within a six-ban d k . p finite difference method. We demonstrated that the conduction- valence Landau level mixing can yield a significant spin splitting for the InAs conduction-band electrons and therefore produce a prominent electron double-line structure with a nearly field-independent energy separation in the cyclotron-resonance spectra. This mixing effect can also yield strong oscillations in the electron cyclotron-resonance mas s, amplitude, and linewidth.