We have developed a computational model to optimize the design of a su
rface reflection neutralization source of hyperthermal neutrals for ch
arge-free processing. For the deployment of this technique to producti
on (greater than or equal to 8 in. wafers) processing, a system design
study has been completed. A Monte Carlo model is used to determine th
e energy and angular distributions of reflected hyperthermal neutrals
at the surface of a wafer, as well as flux uniformity. A simple form f
or the plasma profile is chosen to allow simulation of various profile
s reported in the literature. Neutrals are launched from the reflector
consistent with the relative plasma density at each position on the r
eflector with angular and energy distributions consistent with experim
ental observations. These neutrals are then followed through interacti
ons with thermal background atoms and the plasma. Charge exchange, ion
ization, and elastic scattering processes are considered for argon as
the main feedstock gas. The results show the trade off between a high
density plasma for substantial wafer neutral flux and losses of the ne
utral stream due to ionization and charge exchange in the plasma strea
m. (C) 1996 American Institute of Physics.