FORMATION OF BURIED TIN IN GLASS BY ION-IMPLANTATION TO REDUCE SOLAR LOAD

Ti and N were implanted into soda lime glass to doses up to 4.5X10(17) cm(-2) to reduce solar load and infrared transmission. Analysis of th e Ti+N implant distributions by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy (XPS) revealed profiles which cl osely followed each other as designed by the selection of implant ener gies. XPS, x-ray diffraction, and selected area electron diffraction i n transmission electron microscopy also confirmed the existence of a c rystalline B1-type, cubic TiN layer, 140 nm wide, at doses greater tha n 9X10(16) cm(-2). Optical measurements showed that the fraction of in frared radiation reflected was increased by almost a factor of 4 compa red to an increase of 1.8 in the visible region. The percentage of the total solar energy rejected reached 80% at the highest dose, indicati ng that the buried TiN layer is highly effective in reducing solar ene rgy transmission. (C) 1996 American Institute of Physics.