LATTICE-CONTROLLED MOBILITY IN QUANTIZED SURFACE-LAYERS AT LOW-TEMPERATURE

The momentum relaxation time for intravalley acoustic phonon scatterin g of the conduction electrons in a two-dimensional electron gas has be en obtained under the condition of low temperature when the phonon ene rgy cannot be neglected in comparison to the average thermal energy of the electrons and for that matter the equipartition approximation for the phonon distribution is not valid. The results for an n-channel (1 00)-oriented Si inversion layer are significantly different from what follows from the traditional theory. The temperature dependence of the mobility as obtained from the relaxation time calculated here is rath er different from the traditional T-L(-1) law. (C) 1996 American Insti tute of Physics.