Ak. Ghorai et Dp. Bhattacharya, LATTICE-CONTROLLED MOBILITY IN QUANTIZED SURFACE-LAYERS AT LOW-TEMPERATURE, Journal of applied physics, 80(5), 1996, pp. 3130-3132
The momentum relaxation time for intravalley acoustic phonon scatterin
g of the conduction electrons in a two-dimensional electron gas has be
en obtained under the condition of low temperature when the phonon ene
rgy cannot be neglected in comparison to the average thermal energy of
the electrons and for that matter the equipartition approximation for
the phonon distribution is not valid. The results for an n-channel (1
00)-oriented Si inversion layer are significantly different from what
follows from the traditional theory. The temperature dependence of the
mobility as obtained from the relaxation time calculated here is rath
er different from the traditional T-L(-1) law. (C) 1996 American Insti
tute of Physics.