STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES

Authors
BEISTER G MAEGE J SEBASTIAN J ERBERT G WEIXELBAUM L WEYERS M WURFL J DAGA OP
Citation
G. Beister et al., STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES, IEEE photonics technology letters, 8(9), 1996, pp. 1124-1126
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
9
Year of publication
1996
Pages
1124 - 1126
Database
ISI
SICI code
1041-1135(1996)8:9<1124:SOSFOI>2.0.ZU;2-Y
Abstract
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passi vated using (NH4)(2)S-x. The effectiveness of this procedure was check ed by electroluminescence power-voltage-current (P-V-I) measurements t hat provide information on the changes in the density of surface state s, Using this nondestructive method, the degradation of the passivatio n under ambient atmosphere has been studied. Capping with silicon nitr ide is found to stabilize the sulfur passivation and avoid degradation .