HIGH-SPEED MODULATION OF STRAIN-COMPENSATED INGAAS-GAASP-INGAP MULTIPLE-QUANTUM-WELL LASERS

Small signal direct modulation characteristics of InGaAs-GaAsP-InGaP m ultiple quantum well ridge waveguide lasers (4.5 x 220 mu m(2)) are de scribed, The compressive strain of four InGaAs quantum wells is compen sated by the tensile strain of GaAsP barriers. The lasers have a thres hold current of 8 mA and an internal differential quantum efficiency o f 80%, A 3-dB bandwidth of 25 GHz is obtained at 54 mA, It is found th at the strain-compensated lasers have a K factor as low as 0.15 ns, im plying a maximum 3-dB bandwidth of 59 GHz.