THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION

Authors
POOLE PJ DAVIES M DION M FENG Y CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation
Pj. Poole et al., THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION, IEEE photonics technology letters, 8(9), 1996, pp. 1145-1147
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
9
Year of publication
1996
Pages
1145 - 1147
Database
ISI
SICI code
1041-1135(1996)8:9<1145:TFOABL>2.0.ZU;2-2
Abstract
High-energy ion implantation is used to spatially modify the bandgap o f a 1.5-mu m laser structure to fabricate a broad spectrum light emitt ing diode (LED), An increase in the emission full width half maximum ( FWHM) from 28 nm to 90 nm is observed, An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-P erot noise.