AN INTERDIGITATED STACKED P-I-N MULTIPLE-QUANTUM-WELL MODULATOR

We demonstrate low-voltage operation of a strained InGaAs-GaAs interdi gitated hetero n-i-p-i modulator (or stacked SEED) that is grown and f abricated using a shadow-mask growth technique for making the metal co ntacts to the n- and p-layers separately, An absorption change of 6 x 10(3) cm(-1) with an applied bias as low as similar to 1 V is observed in an unoptimized structure, Optical switching of the unbiased struct ure is also demonstrated.