We describe a single-port, reflective, waveguide modulator based on se
miconductor laser amplifier technology, The single-port geometry reduc
es the high packaging cost associated with two-port waveguide modulato
rs, while the internal gain of the amplifier compensates for splitting
and coupling losses. A modulator with a bulk active layer showed a re
flection-mode chip gain of 17 dB at lambda = 1.56 mu m. When driven wi
th pseudorandom digital data at 100 Mb/s, extinction ratios of > 12 dB
were observed over the broad wavelength range (20 nm) needed for wave
length division multiplexed systems. Bit-error-rate tests confirmed th
at there was no distortion penalty, compared to a LiNbO3 reference mod
ulator.