ULTRA-WIDE-BAND (GREATER-THAN 40 GHZ) SUBMICRON INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

Authors
BOTTCHER EH DROGE E BIMBERG D UMBACH A ENGEL H
Citation
Eh. Bottcher et al., ULTRA-WIDE-BAND (GREATER-THAN 40 GHZ) SUBMICRON INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(9), 1996, pp. 1226-1228
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
9
Year of publication
1996
Pages
1226 - 1228
Database
ISI
SICI code
1041-1135(1996)8:9<1226:U(4GSI>2.0.ZU;2-A
Abstract
Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodet ectors with 3-dB bandwidths in excess of 40 GHz are demonstrated, Devi ces with a 0.3-mu m-thick active layer and an interelectrode spacing o f less than or equal to 0.5 mu m show a roll-off of the frequency resp onse of less than or equal to 2 dB up to 40 GHz when operated at 5-V b ias under front illumination with 1.3-mu m light.