SCANNING ELECTRON-ACOUSTIC MICROSCOPY OF SEMICONDUCTOR-MATERIALS

Authors
LI SW JIANG FM YIN QR JIN YX
Citation
Sw. Li et al., SCANNING ELECTRON-ACOUSTIC MICROSCOPY OF SEMICONDUCTOR-MATERIALS, Solid state communications, 99(11), 1996, pp. 853-857
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
99
Issue
11
Year of publication
1996
Pages
853 - 857
Database
ISI
SICI code
0038-1098(1996)99:11<853:SEMOS>2.0.ZU;2-Z
Abstract
The capability of scanning electron acoustic microscopy in semiconduct or materials has been studied. The signal generation mechanisms and ap plications of scanning electron acoustic microscopy in n-GaSb (Te-dope d) crystals, and GaInAsSb on GaSb, GaSb on GaAs and InSb epilayer on a GaAs substrate are investigated, which shows the new technique for im age and characterization of thermal elastic and pyroelectric property variations on a microscale resolution. Copyright (C) 1996 Elsevier Sci ence Ltd