LOW-LYING STATIONARY STATES OF SI3H AND ITS ANION

Authors
Citation
J. Kalcher et Af. Sax, LOW-LYING STATIONARY STATES OF SI3H AND ITS ANION, Chemical physics letters, 259(1-2), 1996, pp. 165-172
Citations number
16
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
ISSN journal
00092614
Volume
259
Issue
1-2
Year of publication
1996
Pages
165 - 172
Database
ISI
SICI code
0009-2614(1996)259:1-2<165:LSSOSA>2.0.ZU;2-0
Abstract
The ground states of Si3H and Si3H- have been found as (2)A(1) (C-2v) and (1)A(1) (C-2v), respectively, and both correspond to planar cyclic hydrogen-bridged geometries. The adiabatic electron affinity is calcu lated as 256 kJ/mol at the CCSD-(T) level of theory. The in-plane flux ionality of the neutral radical is much more pronounced than that of t he negative ion. Besides these two minima, various stationary points ( minima as well as transition states) for the neutral as well as the ne gative ion have been located. Several triplet negative ion states are found to be adiabatically stable.