MODEL FOR THE PHOTOLUMINESCENCE BEHAVIOR OF POROUS SILICON

We outline a simple framework to explain the vast amount of data on th e photoluminescence (PL) behavior of porous silicon. Our model involve s the competition between an activated radiative process and a Berthel ot-type nonradiative process. Our framework successfully explains a wi de range of observations by various groups on the temperature, pressur e and emission energy dependence of PL. The temperature dependence of luminescence intensity and decay time as predicted by this model is ob served for a variety of materials such as amorphous silicon and chalco genide glasses. The model is transparent, analytic, and does not take recourse to computer modeling or simulation.