SCANNING-TUNNELING-MICROSCOPY STUDIES OF SEMICONDUCTOR SURFACE-STRUCTURE AND GROWTH

Authors
ORR BG
Citation
Bg. Orr, SCANNING-TUNNELING-MICROSCOPY STUDIES OF SEMICONDUCTOR SURFACE-STRUCTURE AND GROWTH, Current opinion in solid state & materials science, 1(1), 1996, pp. 11-16
Citations number
36
Categorie Soggetti
Material Science","Physics, Applied","Physics, Condensed Matter
Journal title
Current opinion in solid state & materials science → ACNP
ISSN journal
13590286
Volume
1
Issue
1
Year of publication
1996
Pages
11 - 16
Database
ISI
SICI code
1359-0286(1996)1:1<11:SSOSS>2.0.ZU;2-Q
Abstract
Scanning tunneling microscopy studies of film growth have centered on two areas: structural determination and surface dynamics. Advances hav e been made recently in the imaging of aperiodic structures such as de fects and dopants. Dynamical studies are starting to produce real-time atomic resolution movies of surfaces during growth.