R. Hull et Ea. Stach, EQUILIBRIUM AND METASTABLE STRAINED-LAYER SEMICONDUCTOR HETEROSTRUCTURES, Current opinion in solid state & materials science, 1(1), 1996, pp. 21-28
Citations number
74
Categorie Soggetti
Material Science","Physics, Applied","Physics, Condensed Matter
Recent progress has been made in the understanding of strain accommoda
tion and relief in lattice-mismatched semiconductor heterostructures.
Specific recent advances include the following: improved understanding
and modeling of competing strain relaxation mechanisms; quantificatio
n of misfit dislocation nucleation processes; improved modeling of cri
tical epilayer thickness for misfit dislocation introduction; improved
understanding of misfit dislocation nucleation mechanisms; new experi
mental techniques for in-situ observation of strain relaxation; new te
chniques for reduction of strain-relieving dislocations; and new calcu
lations of dislocation electronic structure.