A G(M) I-D BASED METHODOLOGY FOR THE DESIGN OF CMOS ANALOG CIRCUITS AND ITS APPLICATION TO THE SYNTHESIS OF A SILICON-ON-INSULATOR MICROPOWER OTA/

A new design methodology based on a unified treatment of all the regio ns of operation of the MOS transistor is proposed. It is intended for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used because it provides a good compromise between speed and power consumption, The s ynthesis procedure is based on the relation between the ratio of the t ransconductance over de drain current g(m)/I-D and the normalized curr ent I-D/(W/L). The g(m)/I-D indeed is a universal characteristic of al l the transistors belonging to a same process. It may be derived from experimental measurements and fitted with simple analytical models, Th e method was applied successfully to the design of a silicon-on-insula tor (SOI) micropower operational transconductance amplifier (OTA).