A 1.2-GS S 8-B SILICON BIPOLAR TRACK-AND-HOLD IC/

Authors
PREGARDIER B LANGMANN U HILLERY WJ
Citation
B. Pregardier et al., A 1.2-GS S 8-B SILICON BIPOLAR TRACK-AND-HOLD IC/, IEEE journal of solid-state circuits, 31(9), 1996, pp. 1336-1339
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
31
Issue
9
Year of publication
1996
Pages
1336 - 1339
Database
ISI
SICI code
0018-9200(1996)31:9<1336:A1S8SB>2.0.ZU;2-Y
Abstract
An Si bipolar all-npn track&hold (T&H) IC is presented for operation u p to 2 GS/s, It Is based on a switched emitter-follower design, The to tal harmonic distortion is less than -52.4 dB, corresponding to 8.4 b, up to 1.2 GS/s over the full Nyquist band, Fabricated in a 25 GHz f(T ) 0.4 mu m emitter width production technology, the IC consumes 460 mW , excluding the test buffer, The transistor count is 67. The T&H lends itself as a building block for multistage high-speed 8-b A/D converte rs.