SILICON DIOXIDE AND HAFNIUM DIOXIDE EVAPORATION CHARACTERISTICS FROM A HIGH-FREQUENCY SWEEP E-BEAM SYSTEM

Citation
R. Chow et N. Tsujimoto, SILICON DIOXIDE AND HAFNIUM DIOXIDE EVAPORATION CHARACTERISTICS FROM A HIGH-FREQUENCY SWEEP E-BEAM SYSTEM, Applied optics, 35(25), 1996, pp. 5095-5101
Citations number
6
Categorie Soggetti
Optics
Journal title
ISSN journal
00036935
Volume
35
Issue
25
Year of publication
1996
Pages
5095 - 5101
Database
ISI
SICI code
0003-6935(1996)35:25<5095:SDAHDE>2.0.ZU;2-U
Abstract
Reactive oxygen evaporation characteristics were determined as a funct ion of the front-panel control parameters provided by a programmable, high-frequency sweep e-beam system. An experimental design strategy us ed deposition rate, beam speed, pattern, azimuthal rotation speed, and dwell time as the variables. The optimal settings for obtaining a bro ad thickness distribution, efficient silicon dioxide boule consumption , and minimal hafnium dioxide defect density were generated. design an alysis showed the compromises involved with evaporating these oxides. (C) 1996 Optical Society of America