R. Chow et N. Tsujimoto, SILICON DIOXIDE AND HAFNIUM DIOXIDE EVAPORATION CHARACTERISTICS FROM A HIGH-FREQUENCY SWEEP E-BEAM SYSTEM, Applied optics, 35(25), 1996, pp. 5095-5101
Reactive oxygen evaporation characteristics were determined as a funct
ion of the front-panel control parameters provided by a programmable,
high-frequency sweep e-beam system. An experimental design strategy us
ed deposition rate, beam speed, pattern, azimuthal rotation speed, and
dwell time as the variables. The optimal settings for obtaining a bro
ad thickness distribution, efficient silicon dioxide boule consumption
, and minimal hafnium dioxide defect density were generated. design an
alysis showed the compromises involved with evaporating these oxides.
(C) 1996 Optical Society of America