PRODUCTION OF INTENSE ATOMIC NITROGEN BEAM USED FOR DOPING AND SYNTHESIS OF NITRIDE FILM

An are-heated source for producing an intense nitrogen atom beam with intensity of 10(19) atoms/sr s and kinetic energies of 0.5-4 eV is pre sented. The are discharge has been carried out in pure nitrogen gas an d maintained stable in an are operating pressure of 30-300 Torr, The b eam kinetic energy changes with the are pressure, and is insensitive t o the are current. Auger electron spectroscopy analysis showed that a TiNO layer with a thickness of about 100 Angstrom was formed on the sm ooth Ti wafer at room temperature with interaction of the atomic nitro gen beam. (C) 1996 American Institute of Physics.