MICROSTRUCTURE FABRICATION USING OXIDATION ON PARTIALLY GA-TERMINATEDSI(111) SURFACES

Oxidation of partially Ga-terminated Si(111) surfaces with clean 7x7 s triped areas along atomic step edges was investigated using scanning r eflection electron microscopy. Molecular oxygen exposure of 100 L at t he substrate temperatures of 410 degrees C oxidized Ga atoms on the Ga -terminated areas as well as Si atoms on the clean 7x7 areas. The Ca o xides were selectively desorbed over the Si oxides during annealing. T his results in the formation of stripe-patterned Si oxides on the surf ace. After growth of an 8-monolayer Si film and subsequent annealing, Si grooves with a depth of about 1 nm and a width around 200 nm were f ormed along the step edges by excess Si-assisted thermal desorption of the Si oxides. (C) 1996 American Institute of Physics.