Negative differential conductance based on lateral band-to-band tunnel
ing is demonstrated in a three-terminal silicon tunneling device. The
device is fabricated with the current silicon ultra-large scale integr
ation (Si ULSI) process, taking care of the field isolation to reduce
the excess tunneling current that flows over some intermediate states.
It is observed that the forward biased band-to-band tunneling current
is largely controlled by the gate bias which modulates the tunneling
barrier width. The three-terminal Si tunneling device is promising as
the post complementary metal-oxide-semiconductor device in future Si U
LSI. (C) 1996 American Institute of Physics.