HYDROGEN-ION MOTION IN AMORPHOUS-SILICON SOLAR-CELLS AT ELEVATED-TEMPERATURES

Citation
De. Carlson et K. Rajan, HYDROGEN-ION MOTION IN AMORPHOUS-SILICON SOLAR-CELLS AT ELEVATED-TEMPERATURES, Applied physics letters, 69(10), 1996, pp. 1447-1449
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
10
Year of publication
1996
Pages
1447 - 1449
Database
ISI
SICI code
0003-6951(1996)69:10<1447:HMIASA>2.0.ZU;2-9
Abstract
Electric held-enhanced degradation has been observed in amorphous sili con solar cells exposed to intense illumination (45-60 suns) at elevat ed temperatures (>160 degrees C). The front tin oxide contacts of both p-i-n and n-i-p cells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. C ompositional profiles of the cells show that a strong reverse bias cau ses a depletion of hydrogen near the contacts. These results are inter preted in terms of proton motion near the p/i interface of p-i-n cells and negative hydrogen ion motion near the i/n interface. (C) 1996 Ame rican Institute of Physics.