BARRIER LAYERLESS SUBMICRON ALUMINUM-DAMASCENE INTERCONNECTION USING ALUMINUM CHEMICAL-VAPOR-DEPOSITION WITH A NEW NUCLEATION METHOD

Barrier layerless submicron damascene interconnection has been realize d by using a combination of novel aluminum chemical vapor deposition ( Al-CVD) and chemical mechanical polishing (CMP) techniques. A new nucl eation method with tetrakis-dimethyl-amino titanium (TDMAT) gas pretre atment has enabled Al-CVD to fill trenches without using a barrier lay er which causes high resistivity. As a result, this technology achieve d Al damascene interconnections with resistance as low as 600 Omega/cm with half-micron wide line and an aspect ratio of 3. This line resist ance is one-third of that for a conventional reactive ion-etched Al li ne with an aspect ratio of 1.