ARRAY OF THE SELF-ORGANIZED INGAAS QUANTUM DOTS ON GAAS (311)B SUBSTRATES BY ATOMIC HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY

We have investigated the ordering of the coherently strained InGaAs qu antum dots (QDs) on GaAs (311)B substrates with molecular beam epitaxy (MBE). The uniform array of the In0.3Ga0.7As QDs is obtained with ato mic hydrogen (H) irradiation with the density of 4.1 x 10(10)/cm(2) an d dot size of 40 nm. The ordering of the QDs is still observed without atomic H, but the uniformity of the ordering of the QDs is deteriorat ed and the dot size increases. The ordered structure of the QDs shows the strong dependence of In content and the array of the QDs is almost disordered as the In content increases to In0.5Ga0.4As.