PHOTOLUMINESCENCE STUDY OF GROWTH-RELATED AND PROCESSING-INDUCED DEFECTS IN INDIUM-PHOSPHIDE

Authors
FAVARO ML TIGINYANU IM TERLETSKY AI HARTNAGEL HL ZAPPIA M AJO D
Citation
Ml. Favaro et al., PHOTOLUMINESCENCE STUDY OF GROWTH-RELATED AND PROCESSING-INDUCED DEFECTS IN INDIUM-PHOSPHIDE, Physica status solidi. a, Applied research, 156(2), 1996, pp. 523-532
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
156
Issue
2
Year of publication
1996
Pages
523 - 532
Database
ISI
SICI code
0031-8965(1996)156:2<523:PSOGAP>2.0.ZU;2-M
Abstract
Low-temperature photoluminescence (PL) spectra of 100 keV He+-implante d n-InP single crystals as well as of 5 MeV alpha-irradiated n-InP cry stals and epilayers have been studied. The radiation-treatment-induced decrease in intensity of bound-excitonic emission was found to be mor e pronounced than that of free-exciton recombination and luminescence related to deep levels. A new band at 1.399 eV was observed in alpha-i rradiated InP epilayers and attributed to defect complexes involving I np antisite. The influence of post-implantation annealing in the tempe rature interval 400 to 750 degrees C upon PL characteristics of He-+-i mplanted n-InP crystals is reported.