THERMOELECTRIC-POWER AND ELECTRICAL-RESISTANCE OF THIN, QUENCH-CONDENSED SB AU BILAYERS - A STUDY OF AN AMORPHOUS PHASE AT THE INTERFACE/

Our investigation of the electrical resistance and the thermoelectric power of thin Au films on top of amorphous Sb films as a function of i ncreasing thickness of the Au film allows us to compare the data with those on amorphous AuxSb100-x films with increasing Au content. The co mparison shows a substantial similarity of the low-temperature data as well as of the annealing behaviour. This gives additional support to the hypothesis of the formation of an amorphous phase at the interface in layered Sb/Au films. The thicknesses of those parts of the Sb film and the Au film which contribute to the formation of the amorphous in terface are determined and agree well with data taken from photoelectr on spectroscopy and resistance measurements during evaporation. The qu antitative differences which exist in the concentration dependence of the electrical resistance and the thermoelectric power between the Sb/ Au bilayers and the amorphous AuxSb100-x films are probably caused by the reduced geometry of the ultrathin interface.