MODELING SEMICONDUCTOR-DEVICE USING THE HYDRODYNAMIC BALANCE-EQUATIONS WITH ACCURATE COLLISION INTEGRAL TERMS

The paper presents new hydrodynamic balance equations for semiconducto r device simulation, which stem from the Lei-Ting balance equations fo r spatially inhomogeneous device structures. Their main characteristic s, which differ from those of the conventional hydrodynamic equations, is the inclusion of accurate momentum and energy collision terms at t he microscopic level. With the help of the nonlinear frictional force and energy transfer functions, the collision terms as well as the rela xation times can be self-consistently calculated from the primary phys ical parameters, taking full account of dynamical screening and other quantum-mechanical effects. A solution method for this set of differen tial-integral equations is proposed and applied to a one-dimensional s imulation of a submicron Si n(+)nn(+)n structure diode. The numerical results for various applied voltages are presented.