OPTIMIZATION OF SI MESFET MODEL WITH PEARSON DISTRIBUTION (FMA) - A NOVEL-APPROACH

Authors
RAJESH S THOMAS C GUPTA RS
Citation
S. Rajesh et al., OPTIMIZATION OF SI MESFET MODEL WITH PEARSON DISTRIBUTION (FMA) - A NOVEL-APPROACH, International journal of electronics, 81(3), 1996, pp. 275-283
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
81
Issue
3
Year of publication
1996
Pages
275 - 283
Database
ISI
SICI code
0020-7217(1996)81:3<275:OOSMMW>2.0.ZU;2-I
Abstract
A new optimal predictive model of ion-implanted Si d-MESFETs with impr oved performance is proposed. We demonstrate quantitatively that Pears on's higher moments have a major influence on the device performance. An enhancement in the drain-source current is reported. Reduction of t he threshold voltage is also established when compared with the gaussi an approach. The closer agreement with the experimental data confirms the validity of this model.