N. Saitou, ELECTRON-BEAM LITHOGRAPHY - PRESENT AND FUTURE, International journal of the Japan Society for Precision Engineering, 30(2), 1996, pp. 107-111
This paper reviews the current status of electron beam direct-writing
lithography and presents its future issues. To improve the throughput
and overlay accuracy, e-beam systems have undergone changes in beam sh
ape and stage movement during these thirty years. The first systems ut
ilized a Gaussian point beam and then the variable-shaped and cell pro
jection beams appeared. The recent progress in proximity effect correc
tion and resist process are remarkable. The effective throughput appro
aches to around 10 wafers/h now and e-beam lithography is becoming pra
ctical for quick turn-around time (QTAT) applications.