1.3-MU-M INGAP INASP MQW LASERS WITH LARGE SPOT-SIZE AND LOW-LOSS FIBER CHIP COUPLING FABRICATED BY A STANDARD BURIED HETEROSTRUCTURE PROCESS/

Authors
BOUADMA N OUGAZZADEN A KAMOUN M KAZMIERSKI C SILVESTRE L
Citation
N. Bouadma et al., 1.3-MU-M INGAP INASP MQW LASERS WITH LARGE SPOT-SIZE AND LOW-LOSS FIBER CHIP COUPLING FABRICATED BY A STANDARD BURIED HETEROSTRUCTURE PROCESS/, Electronics Letters, 32(17), 1996, pp. 1582-1583
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
17
Year of publication
1996
Pages
1582 - 1583
Database
ISI
SICI code
0013-5194(1996)32:17<1582:1IIMLW>2.0.ZU;2-Z
Abstract
1.3 mu m large spot-size laser diodes without a mode converter fabrica ted by conventional buried heterostructure laser process, and using MQ W core structure with low effective refractive index are demonstrated, The devices show low coupling losses to cleaved fibre, good alignment tolerances, and high temperature characteristics.