IRON-DOPED INP BURIED LASER HETEROEPITAXIALLY GROWN ON SI

Authors
YAMADA T TACHIKAWA M SASAKI T MORI H KADOTA Y MATSUMOTO S KISHI K
Citation
T. Yamada et al., IRON-DOPED INP BURIED LASER HETEROEPITAXIALLY GROWN ON SI, Electronics Letters, 32(17), 1996, pp. 1591-1592
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
17
Year of publication
1996
Pages
1591 - 1592
Database
ISI
SICI code
0013-5194(1996)32:17<1591:IIBLHG>2.0.ZU;2-4
Abstract
An iron-doped InP buried DH laser has been successfully grown on Si su bstrate heteroepitaxially. The threshold current of the buried laser i s 28mA, which is 8mA less than that of a ridge waveguide laser. The la ser has a maximum 3dB bandwidth of 8GHz for the frequency response.