TIME-RESOLVED LUMINESCENCE STUDIES OF HEAVILY NITROGEN-DOPED ZNSE

Time-resolved luminescence data from heavily nitrogen doped ZnSe (tota l N concentration exceeding mid-10(18)s/cm(3)) is presented. The lumin escence exhibited a decay time and arise time which increased with dec reasing energy of observation. Furthermore, both the decay times and r ise times decreased with increasing temperature. These observations ar e consistent with the following model: (i) a band of states is created due to fluctuations in the ionized impurity concentrations; (ii) a po rtion of the carriers captured by the shallower impurity states are tr ansferred to deeper states prior to recombination. (C) 1996 American I nstitute of Physics.