DETERMINATION OF CRYSTALLITE PROPAGATION IN LASER ANNEALED AMORPHOUS-SILICON BY NORMAL INCIDENCE SPECTRAL REFLECTANCE

Citation
G. Williams et al., DETERMINATION OF CRYSTALLITE PROPAGATION IN LASER ANNEALED AMORPHOUS-SILICON BY NORMAL INCIDENCE SPECTRAL REFLECTANCE, Applied physics letters, 69(11), 1996, pp. 1623-1625
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
11
Year of publication
1996
Pages
1623 - 1625
Database
ISI
SICI code
0003-6951(1996)69:11<1623:DOCPIL>2.0.ZU;2-O
Abstract
Analysis of normal incidence spectral reflectivity of excimer laser an nealed alpha-Si:H shows that the annealed material can be modeled as a stratified system comprising a large-grained polycrystalline layer, a fine grained polycrystalline layer, and residual amorphous silicon in agreement with transmission electron microscopy. Optically, the large -grained poly-Si behaves as single-crystal silicon and the fine-graine d material is modeled, using effective medium theory, as a mixture of single-crystal silicon and amorphous silicon. (C) 1996 American Instit ute of Physics.