G. Williams et al., DETERMINATION OF CRYSTALLITE PROPAGATION IN LASER ANNEALED AMORPHOUS-SILICON BY NORMAL INCIDENCE SPECTRAL REFLECTANCE, Applied physics letters, 69(11), 1996, pp. 1623-1625
Analysis of normal incidence spectral reflectivity of excimer laser an
nealed alpha-Si:H shows that the annealed material can be modeled as a
stratified system comprising a large-grained polycrystalline layer, a
fine grained polycrystalline layer, and residual amorphous silicon in
agreement with transmission electron microscopy. Optically, the large
-grained poly-Si behaves as single-crystal silicon and the fine-graine
d material is modeled, using effective medium theory, as a mixture of
single-crystal silicon and amorphous silicon. (C) 1996 American Instit
ute of Physics.