ORGANIC INSULATING FILMS OF NANOMETER THICKNESSES

Citation
D. Vuillaume et al., ORGANIC INSULATING FILMS OF NANOMETER THICKNESSES, Applied physics letters, 69(11), 1996, pp. 1646-1648
Citations number
29
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
11
Year of publication
1996
Pages
1646 - 1648
Database
ISI
SICI code
0003-6951(1996)69:11<1646:OIFONT>2.0.ZU;2-U
Abstract
It is demonstrated that monolayers of organic molecules (long chain hy drocarbons) as thin as 1.9 nm, deposited by the self-assembly techniqu e on silicon, form high performance electrically insulating barriers. Their properties are compared with those of silicon dioxide. Leakage c urrent densities through the organic monolayers of the order of 10(-8) -10(-7) A/cm(2) have been obtained. These values are 4-5 decades lower than those for silicon dioxide of equivalent thickness. Larger tunnel ing barriers for organic monolayers than for silicon dioxide explain t hese results. (C) 1996 American Institute of Physics.