EFFECT OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON

Authors
SOTGIU G SCHIRONE L RALLO F
Citation
G. Sotgiu et al., EFFECT OF SURFACTANTS IN THE ELECTROCHEMICAL PREPARATION OF POROUS SILICON, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1179-1186
Citations number
20
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
18
Issue
10
Year of publication
1996
Pages
1179 - 1186
Database
ISI
SICI code
0392-6737(1996)18:10<1179:EOSITE>2.0.ZU;2-S
Abstract
Porous-silicon layers were prepared by anodic oxidation of mono- and m ulti-crystalline Si substrates, n(+) and p-doped, in aqueous HF soluti ons containing surfactants. The resulting samples show a bright Fed-or ange photoluminescence: PL spectra and uniformity are analysed as a fu nction of surfactants kind and concentration. Moreover, the results of Raman spectroscopy are discussed in tel ms of current theories.