CURRENT-VOLTAGE CHARACTERISTICS OF POROUS-SILICON STRUCTURES

I-V DC characteristics have been measured on metal/porous-silicon stru ctures. In particular, the measurements on metal/free-standing porous- silicon film/metal devices confirmed the result, already obtained, tha t the metal/porous-silicon interface plays a crucial role in the trans port of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depen ding on the porous silicon film production parameters. Finally, anneal ing experiments performed in order to improve the conduction of rectif iyng contacts, are described.