WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS

Porous-silicon-based white-light-emitting devices are presented. The f abrication process on different substrates is described. The peculiari ties of technological steps for device fabrication (porous-silicon for mation and aluminum treatment) are underlined. Doping profile of the p orous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are pres ented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented d evices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region.