ACCEPTOR-BOUND HOLE STATES IN SOLID XENON

The energy spectrum of a hole in the valence bands of a Xe crystal whi ch is bound to a negative point charge, is calculated and analyzed in form of a correlation diagram relating the individual bands of the val ence band structure to the level scheme of the bound hole states. It i s found that this energy spectrum depends critically on the whole band structure, and in particular on the splitting of the j = 3/2 bands. O ur calculated binding energies are in good agreement with recent exper imental results. (C) 1996 American Institute of Physics.