QUALITY IMPROVEMENT OF PLASMA-BEAM-DEPOSITED AMORPHOUS HYDROGENATED CARBON WITH HIGHER GROWTH-RATE

Citation
Jwam. Gielen et al., QUALITY IMPROVEMENT OF PLASMA-BEAM-DEPOSITED AMORPHOUS HYDROGENATED CARBON WITH HIGHER GROWTH-RATE, Plasma sources science & technology, 5(3), 1996, pp. 492-498
Citations number
26
Categorie Soggetti
Phsycs, Fluid & Plasmas
ISSN journal
09630252
Volume
5
Issue
3
Year of publication
1996
Pages
492 - 498
Database
ISI
SICI code
0963-0252(1996)5:3<492:QIOPAH>2.0.ZU;2-R
Abstract
An improved plasma beam deposition set-up, based on an expanding therm al plasma, is presented. Amorphous hydrogenated carbon films have been deposited on glass and crystalline silicon, under variation of the ar e current and admired acetylene flow, The films have been analysed ex situ with infrared absorption spectroscopy, broadband visible light tr ansmission and nano-indentation measurements. These techniques reveal the growth rate, refractive index, bonded C-H density, optical bandgap and hardness. The growth rate and refractive index are found to incre ase with decreasing are current and increasing acetylene flow admixtur e. The quality of the films in terms of refractive index and hardness increases with increasing growth rate and inverse energy coefficient, whereas the bonded hydrogen concentration and optical bandgap then dec rease. From comparison of the growth rate dependency with the inverse energy coefficient dependency, we conclude that the growth rate is the preferred parameter in terms of which to describe the film properties because it is directly related to the plasma composition.