MULTIPLE-ROUTE CURRENT-VOLTAGE (I-V) CHARACTERISTICS OF GAAS-INGAAS METAL-INSULATOR-SEMICONDUCTOR-LIKE (MIS) STRUCTURE FOR MULTIPLE-VALUED LOGIC APPLICATIONS

Authors
LIU WC LAIH LW LOUR WS TSAI JH LIN KW CHENG CC
Citation
Wc. Liu et al., MULTIPLE-ROUTE CURRENT-VOLTAGE (I-V) CHARACTERISTICS OF GAAS-INGAAS METAL-INSULATOR-SEMICONDUCTOR-LIKE (MIS) STRUCTURE FOR MULTIPLE-VALUED LOGIC APPLICATIONS, IEEE journal of quantum electronics, 32(9), 1996, pp. 1615-1619
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
32
Issue
9
Year of publication
1996
Pages
1615 - 1619
Database
ISI
SICI code
0018-9197(1996)32:9<1615:MC(COG>2.0.ZU;2-6
Abstract
A new GaAs-InxGa1-x As metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-re sistance (MNDR) current-voltage (I-V) characteristics has been fabrica ted and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple -route I-V characteristic is obtained in the studied device at low tem perature (-130 degrees C). This performance is different from the prev iously reported NDR switching device and has not yet been found in oth er devices. The interesting property of the studied structure provides a promising candidate for switching device applications.