FORMATION MECHANISM OF A NEW EMISSION BAND IN SI-ION-IMPLANTED GAAS AFTER RAPID THERMAL ANNEALING

Authors
KIM DY OH YT KANG TW KIM TW
Citation
Dy. Kim et al., FORMATION MECHANISM OF A NEW EMISSION BAND IN SI-ION-IMPLANTED GAAS AFTER RAPID THERMAL ANNEALING, Journal of materials science letters, 15(17), 1996, pp. 1545-1547
Citations number
16
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
15
Issue
17
Year of publication
1996
Pages
1545 - 1547
Database
ISI
SICI code
0261-8028(1996)15:17<1545:FMOANE>2.0.ZU;2-X