FABRICATION OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS ON SI(100) SUBSTRATES USING MGO INTERMEDIATE LAYER

Tetragonal perovskite Pb(ZrxTi1-x)O-3 (PZT) ferroelectric thin films w ith single c-axis orientation were successfully fabricated on Si(100) substrates using an intermediate layer of MgO thin film. The (100) ori ented MgO intermediate layers can be prepared on Si(100) substrates wi th low growth rate during RF magnetron sputtering at a substrate tempe rature of 300 degrees C. On the (100) oriented MgO intermediate layer, PZT can be deposited using a digital Metalorganic chemical vapor depo sition (MOCVD) method at 480 degrees C. By analysis of cross sections of the PZT/MgO/Si(100) stacked structure using focused ion beam observ ation, it is clearly shown that a uniform MgO layer causes the deposit ed PZT him to consist of a uniform tetragonal perovskite phase. Howeve r, a nonuniform MgO layer causes the PZT film to contain an additional phase because of direct contact between PZT and the Si substrate.